IndiumV3, Main, Repository, bibRecord, 001E07

E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods

Identifieur interne : 001E07 ( Main/Repository ); précédent : 001E06; suivant : 001E08

E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods

Auteurs : RBID : Pascal:12-0373207

Descripteurs français

Pascal (Inist)
- Nanostructure, Formation nanomotif, Lithographie faisceau électron, Epitaxie jet moléculaire, Formation motif, Optimisation, Sélectivité, Microscopie électronique transmission, Photoluminescence, Caractéristique optique, Propriété optique, Nitrure de gallium, Composé binaire, Composé ternaire, Nitrure d'indium, Nanobâtonnet, Titane, Réseau(arrangement), Matériau cristallin, Fabrication microélectronique, 6865, 8116R, 8107D, 8116N, GaN, InGaN, 7867, 8540H, Méthode template.
Wicri :
- concept : Titane.

English descriptors

KwdEn :
- Arrays, Binary compounds, Crystalline material, Electron beam lithography, Gallium nitride, Indium nitride, Microelectronic fabrication, Molecular beam epitaxy, Nanopatterning, Nanorod, Nanostructures, Optical characteristic, Optical properties, Optimization, Patterning, Photoluminescence, Selectivity, Template method, Ternary compounds, Titanium, Transmission electron microscopy.

Abstract

E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nanoholes. This patterned mask served as a template for the subsequent ordered growth of GaN/InGaN nanorods by plasma-assisted molecular beam epitaxy. The mask patterning process was optimized for several holes configurations. The smallest holes were 30 nm in diameter with a pitch (center-to-center distance) of 100 nm only. High quality masks of several geometries were obtained that could be used to grow ordered GaN/InGaN nanorods with full selectivity (growth localized inside the nanoholes only) over areas of hundreds of microns. Although some parasitic InGaN growth occurred between the nanorods during the In incorporation, transmission electron microscopy and photoluminescence measurements demonstrated that these ordered nanorods exhibit high crystal quality and reproducible optical properties.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001814

Links to Exploration step

Pascal:12-0373207

Le document en format XML

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<author><name sortKey="Barbagini, Francesca" uniqKey="Barbagini F">Francesca Barbagini</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>ISOM, E.T.S.I.T., Universidad Politécnica de Madrid, Av. Complutense s/n, Ciudad Universitaria</s1>
<s2>28040 Madrid</s2>
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<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
</placeName>
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<author><name sortKey="Bengoechea Encabo, Ana" uniqKey="Bengoechea Encabo A">Ana Bengoechea-Encabo</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>ISOM, E.T.S.I.T., Universidad Politécnica de Madrid, Av. Complutense s/n, Ciudad Universitaria</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
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<author><name sortKey="Albert, Steven" uniqKey="Albert S">Steven Albert</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>ISOM, E.T.S.I.T., Universidad Politécnica de Madrid, Av. Complutense s/n, Ciudad Universitaria</s1>
<s2>28040 Madrid</s2>
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<author><name sortKey="Lefebvre, Pierre" uniqKey="Lefebvre P">Pierre Lefebvre</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Lahoratoire Charles Coulomb, UMR5221, CNRS, Université Montpellier II, Case Courrier 074</s1>
<s2>34095 Montpellier</s2>
<s3>FRA</s3>
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<country>France</country>
<placeName><region type="region" nuts="2">Languedoc-Roussillon</region>
<settlement type="city">Montpellier</settlement>
</placeName>
<orgName type="university">Université Montpellier 2</orgName>
</affiliation>
</author>
<author><name sortKey="Martinez, Javier" uniqKey="Martinez J">Javier Martinez</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>ISOM, E.T.S.I.T., Universidad Politécnica de Madrid, Av. Complutense s/n, Ciudad Universitaria</s1>
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<author><name sortKey="Sanchez Garcia, Miguel Angel" uniqKey="Sanchez Garcia M">Miguel Angel Sanchez-Garcia</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>ISOM, E.T.S.I.T., Universidad Politécnica de Madrid, Av. Complutense s/n, Ciudad Universitaria</s1>
<s2>28040 Madrid</s2>
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<author><name sortKey="Trampert, Achim" uniqKey="Trampert A">Achim Trampert</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Paul Drude Institut für Festköperelektronik, Hausvogteiplatz 5-7</s1>
<s2>Berlin 10117</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Calleja, Enrique" uniqKey="Calleja E">Enrique Calleja</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>ISOM, E.T.S.I.T., Universidad Politécnica de Madrid, Av. Complutense s/n, Ciudad Universitaria</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
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<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
</placeName>
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<publicationStmt><idno type="inist">12-0373207</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0373207 INIST</idno>
<idno type="RBID">Pascal:12-0373207</idno>
<idno type="wicri:Area/Main/Corpus">001814</idno>
<idno type="wicri:Area/Main/Repository">001E07</idno>
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<seriesStmt><idno type="ISSN">0167-9317</idno>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<title level="j" type="main">Microelectronic engineering</title>
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<term>Binary compounds</term>
<term>Crystalline material</term>
<term>Electron beam lithography</term>
<term>Gallium nitride</term>
<term>Indium nitride</term>
<term>Microelectronic fabrication</term>
<term>Molecular beam epitaxy</term>
<term>Nanopatterning</term>
<term>Nanorod</term>
<term>Nanostructures</term>
<term>Optical characteristic</term>
<term>Optical properties</term>
<term>Optimization</term>
<term>Patterning</term>
<term>Photoluminescence</term>
<term>Selectivity</term>
<term>Template method</term>
<term>Ternary compounds</term>
<term>Titanium</term>
<term>Transmission electron microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Nanostructure</term>
<term>Formation nanomotif</term>
<term>Lithographie faisceau électron</term>
<term>Epitaxie jet moléculaire</term>
<term>Formation motif</term>
<term>Optimisation</term>
<term>Sélectivité</term>
<term>Microscopie électronique transmission</term>
<term>Photoluminescence</term>
<term>Caractéristique optique</term>
<term>Propriété optique</term>
<term>Nitrure de gallium</term>
<term>Composé binaire</term>
<term>Composé ternaire</term>
<term>Nitrure d'indium</term>
<term>Nanobâtonnet</term>
<term>Titane</term>
<term>Réseau(arrangement)</term>
<term>Matériau cristallin</term>
<term>Fabrication microélectronique</term>
<term>6865</term>
<term>8116R</term>
<term>8107D</term>
<term>8116N</term>
<term>GaN</term>
<term>InGaN</term>
<term>7867</term>
<term>8540H</term>
<term>Méthode template</term>
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<front><div type="abstract" xml:lang="en">E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nanoholes. This patterned mask served as a template for the subsequent ordered growth of GaN/InGaN nanorods by plasma-assisted molecular beam epitaxy. The mask patterning process was optimized for several holes configurations. The smallest holes were 30 nm in diameter with a pitch (center-to-center distance) of 100 nm only. High quality masks of several geometries were obtained that could be used to grow ordered GaN/InGaN nanorods with full selectivity (growth localized inside the nanoholes only) over areas of hundreds of microns. Although some parasitic InGaN growth occurred between the nanorods during the In incorporation, transmission electron microscopy and photoluminescence measurements demonstrated that these ordered nanorods exhibit high crystal quality and reproducible optical properties.</div>
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<fA11 i1="02" i2="1"><s1>BENGOECHEA-ENCABO (Ana)</s1>
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<fA14 i1="01"><s1>ISOM, E.T.S.I.T., Universidad Politécnica de Madrid, Av. Complutense s/n, Ciudad Universitaria</s1>
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<fA14 i1="02"><s1>Lahoratoire Charles Coulomb, UMR5221, CNRS, Université Montpellier II, Case Courrier 074</s1>
<s2>34095 Montpellier</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Paul Drude Institut für Festköperelektronik, Hausvogteiplatz 5-7</s1>
<s2>Berlin 10117</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nanoholes. This patterned mask served as a template for the subsequent ordered growth of GaN/InGaN nanorods by plasma-assisted molecular beam epitaxy. The mask patterning process was optimized for several holes configurations. The smallest holes were 30 nm in diameter with a pitch (center-to-center distance) of 100 nm only. High quality masks of several geometries were obtained that could be used to grow ordered GaN/InGaN nanorods with full selectivity (growth localized inside the nanoholes only) over areas of hundreds of microns. Although some parasitic InGaN growth occurred between the nanorods during the In incorporation, transmission electron microscopy and photoluminescence measurements demonstrated that these ordered nanorods exhibit high crystal quality and reproducible optical properties.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Formation motif</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Patterning</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Optimisation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Optimization</s0>
<s5>06</s5>
</fC03>
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<s5>07</s5>
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<s5>07</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Selectividad</s0>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
</fC03>
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<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Optical characteristic</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Característica óptica</s0>
<s5>10</s5>
</fC03>
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<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>23</s5>
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<fC03 i1="13" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Nanobâtonnet</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Nanorod</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Nanopalito</s0>
<s5>26</s5>
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<s2>NC</s2>
<s5>27</s5>
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<s2>NC</s2>
<s5>27</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>Réseau(arrangement)</s0>
<s5>28</s5>
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<fC03 i1="18" i2="3" l="ENG"><s0>Arrays</s0>
<s5>28</s5>
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<s5>29</s5>
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<s5>29</s5>
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<s5>29</s5>
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<s5>46</s5>
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<fC03 i1="20" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
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<s4>INC</s4>
<s5>59</s5>
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<fC03 i1="25" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>82</s5>
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<fC03 i1="26" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
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<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>8540H</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>Méthode template</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="29" i2="3" l="ENG"><s0>Template method</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>12</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>12</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>12</s5>
</fC07>
<fC07 i1="02" i2="X" l="FRE"><s0>Lithographie sans masque</s0>
<s5>13</s5>
</fC07>
<fC07 i1="02" i2="X" l="ENG"><s0>Maskless lithography</s0>
<s5>13</s5>
</fC07>
<fC07 i1="02" i2="X" l="SPA"><s0>Litografía sin máscara</s0>
<s5>13</s5>
</fC07>
<fN21><s1>289</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Micro- and Nano-Engineering (MNE)</s1>
<s2>37</s2>
<s3>Berlin DEU</s3>
<s4>2011-09-19</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods

E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods

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